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2SC2391

Part Number	2SC2391
Manufacturer	Toshiba
Description	Silicon NPN Transistor
Published	Jul 17, 2018
Detailed Description	SILICON NPN EPITAXIAL PLANAR TYPE UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES . Output Power : P Q =3W(Min.) (f=470...
Datasheet	2SC2391 PDF File

Overview

SILICON NPN EPITAXIAL PLANAR TYPE UHF BAND POWER AMPLIFIER APPLICATIONS.
FEATURES .
Output Power : P Q =3W(Min.
) (f=470MHz, V CC=12.
6V, Pi=0.
4W) .
100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ V CC=15V, P±* : 0.
4W, f=470MHz Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VcBO 35 Collector-Emitter Voltage VcEO 17 Emitter-Base Voltage Collector Current Collector Power Dissipation (Tc=25°C) VEBO ic PC 3.
5 0.
8 7.
5 1.
EMITTER 2.
BASE 3.
EMITTER 4.
COLLECTOR Junction Temperature 175 Storage Temperature Range L stg ELECTRICAL CHARACTERISTICS (Ta =25 °c) CHARACTERISTIC SYMBOL Collector Cut-off Current Co...

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