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2SC2381

Part Number	2SC2381
Manufacturer	Toshiba
Description	Silicon NPN Transistor
Published	Jul 17, 2018
Detailed Description	SILICON NPN EPITAXIAL PLANAR TYPE UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES . Output Power : P =25W(Min.) (f=470M...
Datasheet	2SC2381 PDF File

Overview

SILICON NPN EPITAXIAL PLANAR TYPE UHF BAND POWER AMPLIFIER APPLICATIONS.
FEATURES .
Output Power : P =25W(Min.
) (f=470MHz, V CC=12.
6V, Pi=10W) .
100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ V C c=12.
6V, Pi=10W, f=470MHz Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL 'CBO 'CEO 'EBO IC PC L stg RATING 35 17 3.
5 UNIT V 50 I.
EMITTER Z.
BASE 3.
EMITTER 4.
COLLECTOR 175 -65~175 °C EIA.
TOSHIBA Weight : 4g ELECTRICAL CHARACTERISTICS (Tc=25°C) CHARACTERISTIC SYMBOL Collector...

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