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2SC2379

Part Number	2SC2379
Manufacturer	Toshiba
Description	Silicon NPN Transistor
Published	Jul 17, 2018
Detailed Description	SILICON NPN EPITAXIAL PLANAR TYPE 2SC2379 UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES . Output Power : P =6W(Min.)...
Datasheet	2SC2379 PDF File

Overview

SILICON NPN EPITAXIAL PLANAR TYPE 2SC2379 UHF BAND POWER AMPLIFIER APPLICATIONS.
FEATURES .
Output Power : P =6W(Min.
) (f=470MHz, VCC=12.
6V, Pi=lW) .
100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ V C C=12.
5V, P =6.
5W, f=470MHz Unit in mm MAXIMUM RATINGS (Ta=25 °C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation (Tc=25 °C) Junction Temperature Storage Temperature Range SYMBOL VcBO VCEO VeBO ic Ti L stg ELECTRICAL CHARACTERISTICS (Tc=25°C) CHARACTERISTIC SYMBOL Collector Cut-off Current ICBO Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base B...

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