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2SD1409

Part Number	2SD1409
Manufacturer	Toshiba
Description	Silicon NPN Transistor
Published	Jul 16, 2018
Datasheet	2SD1409 PDF File

Features

. High DC Current Gain : hFE=600(Min. ) ( V CE=2V, I C=2A) . Monolithic Construction with Built-in 3ase-Emitter
Shunt Resistor.

MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage

SYMBOL VCBO VCEO

RATING 600 4...

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