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2SD1360

Part Number	2SD1360
Manufacturer	Toshiba
Description	Silicon NPN Transistor
Published	Jul 16, 2018
Datasheet	2SD1360 PDF File

Features

. High DC Current Gain : h FE=600(Min. ) (at VCE=2V, Ic=2A) . Monolithic Construction with Built-in Base-Emitter
Shunt Resistor.

INDUSTRIAL APPLICATIONS Unit in mm
1G3MAX.

MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC

SYMBOL RATING UNIT

Collector-Base...

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