DatasheetsPDF.com

2N3713

Part Number	2N3713
Manufacturer	Toshiba
Description	GENERAL PURPOSE POWER TRANSISTOR
Features	. High Gain at High Current . Low Saturation Voltage : VcE(sat) =1 - ov (Max.) @ IC=5A, Ib=0.5A . Excellent Area of Saf...
Published	Jul 16, 2018
Datasheet	2N3713 PDF File

Similar Datasheet

2N3700 Silicon Planar Epitaxial NPN transistor - STMicroelectronics
2N3700 Low Power Transistor - ON Semiconductor
2N3700 LOW POWER NPN SILICON TRANSISTOR - Microsemi Corporation
2N3700 SILICON NPN TRANSISTOR - TT
2N3700 Bipolar Transistor - Multicomp
2N3700 NPN Low Power Silicon Transistor - MA-COM
2N3700 NPN TRANSISTORS - Central Semiconductor
2N3700 NPN Low Power Silicon Transistor - VPT
2N3700 Silicon Planar Epitaxial Transistors - Comset Semiconductor
2N3700 NPN SILICON PLANAR EPITAXIAL TRANSISTORS - CDIL

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)