DatasheetsPDF.com
S1377
Part Number
S1377
Manufacturer
Toshiba
Description
NPN
Transistor
Published
Jul 16, 2018
Datasheet
S1377
PDF File
Features
. High Collector to Emitter Breakdown
Voltage
V CEO=250V Unit in mm 9.9MAX. 03.2+0.2 i? n. 1.2 TTTI 0.66 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base
Voltage
Collector-Emitter
Voltage
Emitter-Base
Voltage
Collector Current Base Cur...
Similar Datasheet
S13 SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
- YS
S1300 Two-dimensional PSD
- HAMAMATSU
S1300-5MG-BL LASER DIODES
- Roithner
S1300-5MG-FW LASER DIODES
- Roithner
S13003ADL Bipolar Junction Transistor
- Jingdao
S13003D NPN Transistor
- ETC
S13003DL Bipolar Junction Transistor
- Jingdao
S13021-01CT Photo IC
- HAMAMATSU
S13174-01SR Photo-IC
- HAMAMATSU
S13282-01CR Photosensors
- HAMAMATSU
Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (
Privacy Policy & Contact
)