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BPW34SR

OSRAM
Part Number BPW34SR
Manufacturer OSRAM
Description Silicon PIN Photodiode
Published Jul 1, 2018
Detailed Description 2018-02-23 Silicon PIN Photodiode Version 1.4 BPW 34 SR Features: • Suitable for reflow soldering • Especially suitable...
Datasheet PDF File BPW34SR PDF File

BPW34SR
BPW34SR


Overview
2018-02-23 Silicon PIN Photodiode Version 1.
4 BPW 34 SR Features: • Suitable for reflow soldering • Especially suitable for applications from 400 nm to 1100 nm • Short switching time (typ.
20 ns) • DIL plastic package with high packing density • The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification for Automotive Grade Discrete Semiconductors.
Applications • Photointerrupters • Industrial electronics • For control and drive circuits • IR remote control of hi-fi and TV sets, dimmers, remote controls of various equipment Ordering Information Type: BPW 34 SR Photocurrent Ordering Code IP [µA] Ev = 1000 lx, Std.
Light A, VR = 5 V 80 (≥ 50) Q65110A2701 2018-02-23 1 Version 1.
4 Maximum Ratings (TA = 25 °C) Parameter Operating and storage temperature range Reverse voltage Total Power dissipation ESD withstand voltage (acc.
to ANSI/ ESDA/ JEDEC JS-001 - HBM) Characteristics (TA = 25 °C) Parameter Photocurrent (Ev = 1000 lx, Std.
Light A, VR = 5 V) Wavelength of max.
sensitivity Spectral range of sensitivity Radiant sensitive area Dimensions of radiant sensitive area Half angle Dark current (VR = 10 V) Spectral sensitivity of the chip (λ = 850 nm) Quantum yield of the chip (λ = 850 nm) Open-circuit voltage (Ev = 1000 lx, Std.
Light A) Short-circuit current (Ev = 1000 lx, Std.
Light A) Rise and fall time (VR = 5 V, RL = 50 Ω, λ = 850 nm, IP = 800 µA) Forward voltage (IF = 100 mA, E = 0) Capacitance (VR = 0 V, f = 1 MHz, E = 0) Temperature coefficient of VO BPW 34 SR Symbol Top; Tstg VR Ptot VESD Values -40 .
.
.
100 32 150 2000 Unit °C V mW V Symbol (typ (min)) IP (typ) (typ) λS max λ10% (typ) (typ) A LxW (typ) ϕ (typ (max)) IR (typ) Sλ typ (typ) η (typ (min)) VO (typ) ISC (typ) tr, tf (typ) VF (typ) C0 (typ) TCV Values 80 (≥ 50) Unit µA 850 (typ) 400 .
.
.
1100 7.
02 2.
65 x 2.
65 ± 60 2 (≤ 30) nm nm mm2 mm x mm ° nA 0.
62 A/W 0.
90 365 (≥300) Electro ns /Photon mV 80 µA 0.
02 µs 1.
...


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