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BPX61

OSRAM
Part Number BPX61
Manufacturer OSRAM
Description Silicon NPN Phototransistor
Published Jul 1, 2018
Detailed Description 2015-12-23 Silicon PIN Photodiode Version 1.3 BPX 61 Features: • Suitable up to 125 °C • Especially suitable for applic...
Datasheet PDF File BPX61 PDF File

BPX61
BPX61


Overview
2015-12-23 Silicon PIN Photodiode Version 1.
3 BPX 61 Features: • Suitable up to 125 °C • Especially suitable for applications from 400 nm to 1100 nm • Short switching time (typ.
20 ns) • Hermetically sealed metal package (similar to TO-5) Applications • Industrial electronics • For control and drive circuits • Photointerrupters • IR remote control of hi-fi and TV sets, dimmers, remote controls of various equipment Ordering Information Type: BPX 61 Photocurrent Ordering Code IP [µA] Ev = 1000 lx, Std.
Light A, VR =5V 70 (≥ 50) Q62705P0025 2015-12-23 1 Version 1.
3 Maximum Ratings (TA = 25 °C) Parameter Operating and storage temperature range Reverse voltage Total Power dissipation ESD withstand voltage (acc.
to ANSI/ ESDA/ JEDEC JS-001 - HBM) Characteristics (TA = 25 °C) Parameter Spectral sensitivity (VR = 5 V) Photocurrent (Ev = 1000 lx, Std.
Light A, VR = 5 V) Wavelength of max.
sensitivity Spectral range of sensitivity Radiant sensitive area Dimensions of radiant sensitive area Half angle Dark current (VR = 10 V) Spectral sensitivity of the chip (λ = 850 nm) Quantum yield of the chip (λ = 850 nm) Open-circuit voltage (Ev = 1000 lx, Std.
Light A) Short-circuit current (Ev = 1000 lx, Std.
Light A) Rise and fall time (VR = 5 V, RL = 50 Ω, λ = 850 nm, IP = 800 µA) Forward voltage (IF = 100 mA, E = 0) Capacitance (VR = 0 V, f = 1 MHz, E = 0) Temperature coefficient of VO BPX 61 Symbol Top; Tstg VR Ptot VESD Values -40 .
.
.
125 32 250 2000 Unit °C V mW V (typ) Symbol S (typ (min)) IP (typ) (typ) λS max λ10% (typ) (typ) A LxW (typ) ϕ (typ (max)) IR (typ) Sλ typ (typ) η (typ (min)) VO (typ) ISC (typ) tr, tf (typ) VF (typ) C0 (typ) TCV Values 70 (≥ 50) Unit nA/Ix 70 (≥ 50) µA 850 (typ) 400 .
.
.
1100 7.
02 2.
65 x 2.
65 ± 55 2 (≤ 30) nm nm mm2 mm x mm ° nA 0.
62 A/W 0.
90 375 (≥ 320) Electro ns /Photon mV 70 µA 0.
02 µs 1.
3 V 72 pF -2.
6 mV / K 2015-12-23 2 Version 1.
3 BPX 61 Parameter Temperature coefficient of ISC (Std.
...


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