ME95N03T-G N-Channel MOSFET

ME95N03T-G N-Channel MOSFET

The ME95N03T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. FEATURES ● RDS(ON)≦6mΩ@VGS=10V ● RDS(ON)≦9mΩ@VGS=4.5V ● Super high dens.

Features

● RDS(ON)≦6mΩ@VGS=10V
● RDS(ON)≦9mΩ@VGS=4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability APPLICATIONS
● Power Management in Note book
● DC/DC Converter
● Load Switch
● LCD Display inverter PIN CONFIGURATION (TO-220) Top View eOrdering Information: ME95N03T (Pb-free) ME95N03T-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGSS Continuous Drain Current* TC=25℃ TC=70℃ ID Pulsed Drain Current IDM Maximum.