ME45N03T-G |
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| Part Number | ME45N03T-G |
| Manufacturer | Matsuki |
| Description | The ME45N03T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to mi... |
| Features |
● RDS(ON)≦14mΩ@VGS=10V ● RDS(ON)≦21mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter PIN CONFIGURATION (TO-220) Top View eOrdering Information: ME45N03T (Pb-free) ME45N03T-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGSS Continuous Drain Current(Tj=150℃) TC=25℃ TC=70℃ ID Pulsed Drain Current I... |
| Document |
 ME45N03T-G Data Sheet
PDF 1.16MB |
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| No. | Part # | Manufacture | Description | Datasheet |
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Matsuki |
N-Channel MOSFET |
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Matsuki |
N- and P-Channel 30-V (D-S) MOSFET |
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Matsuki |
N- & P-Channel MOSFET |
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Matsuki |
N- & P-Channel MOSFET |
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Matsuki |
N- & P-Channel MOSFET |
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Matsuki |
N- & P-Channel MOSFET |
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Matsuki |
N- & P-Channel MOSFET |
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Matsuki |
N- & P-Channel MOSFET |
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Matsuki |
Dual N- & P-Channel MOSFET |
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Matsuki |
Dual N- & P-Channel MOSFET |
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