ME50N75T-G Datasheet

ME50N75T-G N-Channel MOSFET

The ME50N75T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. FEATURES ● RDS(ON)≦26mΩ@VGS=10V ● Super high density cell design for ex.

Features

● RDS(ON)≦26mΩ@VGS=10V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability APPLICATIONS
● Power Management
● DC/DC Converter
● Load Switch PIN CONFIGURATION (TO-220) Top View e Ordering Information: ME50N75T (Pb-free) ME50N75T-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Tc=25℃ TC=70℃ Pulsed Drain Current Maximum Power Dissipation TC=25℃ TC=70℃ Operating Junction and Storage Temperature Range Ther.