ME25N10T N-Channel MOSFET

ME25N10T N-Channel MOSFET

The ME25N10T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such a.

Features

● RDS(ON)≦85mΩ@VGS=10V
● RDS(ON)≦105mΩ@VGS=4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability APPLICATIONS
● Power Management in Note book
● DC/DC Converter
● Load Switch
● LCD Display inverter (TO-220) Top View * The Ordering Information: ME25N10T (Pb-free) ME25N10T-G (Green product-Halogen free ) Absolute Maximum Rati.