ME2N7002F |
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Part Number | ME2N7002F |
Manufacturer | Matsuki |
Description | The ME2N7002F is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to ... |
Features |
● RDS(ON)≦8Ω@VGS=4V ● RDS(ON)≦13Ω@VGS=2.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter (SOT-23) Top View Ordering Information:ME2N7002F (Pb-free) ME2N7002F-G (Green product-Halogen free) Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25℃ TA=70℃ Pulsed Drain Current Maximum Power Dissipation TA=25℃ TA=70℃ Operating Junctio... |
Datasheet |
ME2N7002F Data Sheet
PDF 605.50KB |
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
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Matsuki |
N-Channel MOSFET |
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Matsuki |
N-Channel MOSFET |
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Matsuki |
N-Channel MOSFET |
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Matsuki |
Dual N-Channel MOSFET |
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Matsuki |
N-Channel MOSFET |
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Matsuki |
N-Channel MOSFET |
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Matsuki |
Dual N-Channel MOSFET |
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Matsuki |
N-Channel MOSFET |
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Matsuki |
N-Channel MOSFET |
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Matsuki |
Dual N-Channel MOSFET |
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