ME2N7002E-G N-Channel MOSFET

ME2N7002E-G N-Channel MOSFET

The ME2N7002E-G is the N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications req.

Features

ϥʳ 60V / 0.50A , RDS(ON)= 5.0ȍ@VGS=10V ϥʳ 60V / 0.30A , RDS(ON)= 5.5ȍ@VGS=4.5V ϥʳ Super high density cell design for extremely low RDS (ON) ϥʳ Exceptional on-resistance and maximum DC current capability ϥʳ SOT-23 package design APPLICATIONS ϥʳ High density cell design for low RDS(ON) ϥʳ Voltage controlled small signal switch ϥʳ Rugge.