ME2309 P-Channel 60V (D-S) MOSFET

ME2309 P-Channel 60V (D-S) MOSFET

The ME2309 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as .

Features

● RDS(ON)≦215mΩ@VGS=-10V
● RDS(ON)≦260mΩ@VGS=-4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability APPLICATIONS
● Power Management in Note book
● Portable Equipment
● Battery Powered System
● DC/DC Converter
● Load Switch
● DSC
● LCD Display inverter
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 Ordering Information:ME.