FNK02N09S N-Channel Power MOSFET

FNK02N09S N-Channel Power MOSFET

The FNK02N09S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features ● VDS = 20V,ID =15A RDS(ON) < 15mΩ @ VGS=2.5V R.

Features

● VDS = 20V,ID =15A RDS(ON) < 15mΩ @ VGS=2.5V RDS(ON) < 10mΩ @ VGS=4.5V ESD Rating: 2000V HBM
● High power and current handing capability
● Lead free product is acquired
● Surface mount package Schematic diagram Marking and pin assignment Application
● Uni-directional load switch
● Bi-directional load switch TSSOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package 02N09S FNK02N09S TSSOP-8 Reel Size Ø330mm Tape width 12mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS .