FNK03P05E Datasheet

FNK03P05E P-Channel Power MOSFET

The FNK03P05E uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-30V,ID =-50A RDS(ON) < 9mΩ @ VGS=-10V Marking and pin assignment D G S Schematic diagram ● High density cell desi.

Features

● VDS =-30V,ID =-50A RDS(ON) < 9mΩ @ VGS=-10V Marking and pin assignment D G S Schematic diagram
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation Top View DFN5X6 Bottom View Application
● Battery and loading switching PIN1 Package Marking and Ordering Information Device Marking Device Device Package FNK03P05E FNK03P05E DFN 5x6 8L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symb.