FNK85N12 N-Channel Power MOSFET

FNK85N12 N-Channel Power MOSFET

The FNK85N12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● VDS =85V,ID =120A RDS(ON) <5.7mΩ @ VGS=10V (Typ:4.5mΩ) ● High density cell design .

Features

● VDS =85V,ID =120A RDS(ON) <5.7mΩ @ VGS=10V (Typ:4.5mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Special designed for convertors and power controls
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability Schematic diagram Application
● Automotive applications
● Hard switched and high frequency circuits
● Uninterruptible power supply To-220 Top View Package Marking and Ordering Information Device Marking Device Device Package FNK85N12 F.