MHU04N60 |
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Part Number | MHU04N60 |
Manufacturer | CITC |
Description | Chip Integration Technology Corporation MHU04N60 Silicon N-Channel Power MOSFET Main Product Characteristics ID VDSS PD(TC=25oC) RDS(ON)Typ 4A 600V 75W 2.0Ω ■ Features • Fast switching. • ESD imp... |
Features |
• Fast switching. • ESD improved capability. • Low gate charge. (Typical Data:13nC) • Low reverse transfer capacitances.(Typical:2.2pF) • 100% single pulse avalanche energy test. ■ Application • Power switch circuit of adaptor and charger. ■ Outline TO-251 12 3 1.Gate 2.Drain 3.Source Drain ■ Mechanical data • Epoxy:UL94-V0 rated flame retardant • Case : JEDEC TO-251 molded plastic body over passivated chip • Lead : Axial leads, solderable per MIL-STD-202, Method 208 guranteed. Gate Source Inner Equivalent principium Chart ■ Absolute(TC = 25OC unless otherwise specified) PARAMETER Drain to... |
Document |
MHU04N60 Data Sheet
PDF 968.34KB |
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No. | Part # | Manufacture | Description | Datasheet |
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