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PZTA96ST1G High Voltage Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO − 450 Vdc Collector−Base Voltage VCBO − 450 Vdc Emitter−Base Voltage VEBO − 5.0 .
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
− 450
Vdc
Collector−Base Voltage
VCBO
− 450
Vdc
Emitter−Base Voltage
VEBO
− 5.0
Vdc
Collector Current
IC
− 500
mAdc
Total Power Dissipation Up to TA = 25°C (Note 1)
PD W 1.5
Storage Temperature Range
Tstg − 65 to +150 °C
Junction Temperature
TJ 150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not impl.
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