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 DataSheet (690.29KB)
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The TH58BVG2S3HBAI4 is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 64) bytes 64 pages 4096 blocks. The device has a 2112-byte static register which allows program and read data to be transferred between.
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| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
|---|---|---|---|---|
| 1 | TH58BVG3S0HBAI4 |
Toshiba |
8 GBIT (1G x 8 BIT) CMOS NAND E2PROM |
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| 2 | TH58BVG3S0HBAI6 |
Toshiba |
8G-BIT (1G x 8 BIT) CMOS NAND E2PROM |
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| 3 | TH58BVG3S0HTA00 |
Toshiba |
8 GBIT (1G x 8 BIT) CMOS NAND E2PROM |
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| 4 | TH58BVG3S0HTAI0 |
Toshiba |
8 GBIT (1G x 8 BIT) CMOS NAND E2PROM |
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| 5 | TH58BYG3S0HBAI4 |
Toshiba |
8 GBIT (1G x 8 BIT) CMOS NAND E2PROM |
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| 6 | TH58100FT |
Toshiba Semiconductor |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
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| 7 | TH58100FTI |
Toshiba Semiconductor |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
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| 8 | TH58NVG1S3AFT05 |
Toshiba Semiconductor |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
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| 9 | TH58NVG2S3BTG00 |
Toshiba |
4-Gbit CMOS NAND EPROM |
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| 10 | TH58NVG3D4BTG00 |
Toshiba |
8 GBIT (1024M x 8 BIT) CMOS NAND E2PROM |
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| 11 | TH58NVG3S0HBAI4 |
Toshiba |
8 GBIT (1G x 8 BIT) CMOS NAND E2PROM |
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| 12 | TH58NVG3S0HBAI6 |
Toshiba |
8G-BIT (1G x 8 BIT) CMOS NAND E2PROM |
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| 13 | TH58NVG3S0HTA00 |
Toshiba |
8 GBIT (1G x 8 BIT) CMOS NAND E2PROM |
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| 14 | TH58NVG3S0HTAI0 |
Toshiba |
8 GBIT (1G x 8 BIT) CMOS NAND E2PROM |
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| 15 | TH58NVG4S0FBAID |
Toshiba |
16 GBIT (2G x 8 BIT) CMOS NAND E2PROM |
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