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SMD Type Low-leakage diode BAS116 Diodes Features Plastic SMD package Low leakage current: typ. 3 pA Switching time: typ. 0.8 ìs Continuous reverse voltage:max. 75 V Repetitive peak reverse voltage:max. 85 V Repetitive peak forward current:max. 500 mA. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -.
Plastic SMD package Low leakage current: typ. 3 pA Switching time: typ. 0.8 ìs Continuous reverse voltage:max. 75 V Repetitive peak reverse voltage:max. 85 V Repetitive peak forward current:max. 500 mA. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Repetitive peak reverse voltage Continuous reverse voltage Continuous forward current Repetitive peak forward current Non-repetitive peak forward current Total .
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
|---|---|---|---|---|
| 1 | BAS11 |
NXP |
Controlled avalanche rectifiers |
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| 2 | BAS116 |
nexperia |
Low-leakage diode |
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| 3 | BAS116 |
Diodes Incorporated |
SURFACE MOUNT LOW LEAKAGE DIODE |
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| 4 | BAS116 |
Infineon |
Silicon Low Leakage Diode |
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| 5 | BAS116 |
LITE-ON |
SURFACE MOUNT FAST SWITCHING DIODE |
|
| 6 | BAS116 |
WON-TOP |
SURFACE MOUNT FAST SWITCHING DIODE |
|
| 7 | BAS116 |
Taiwan Semiconductor |
75V Switching SMD Diode |
|
| 8 | BAS116 |
TAITRON |
Three Terminals SMD Low Leakage Switching Diode |
|
| 9 | BAS116-AU |
Pan Jit International |
LOW LEAKAGE SWITCHING DIODES |
|
| 10 | BAS116GW |
nexperia |
Low leakage switching diode |
|
| 11 | BAS116H |
NXP |
low leakage diode |
|
| 12 | BAS116H |
nexperia |
Low leakage switching diode |
|
| 13 | BAS116L |
ON Semiconductor |
Switching Diode |
|
| 14 | BAS116L |
nexperia |
Low-leakage diode |
|
| 15 | BAS116LP3 |
Diodes |
ULTRA-SMALL SURFACE MOUNT LOW LEAKAGE DIODE |
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