SMD Type Diodes ULTRA HIGH SPEED SWITCHING APPLICATION 1SS187 Features Small Package Low forward voltage :VF(3) = 0.92 V(Typ.) Fast Reverse Recovery Time :trr = 1.6 ns(Typ.) Small Total Capacitance :CT = 2.2pF(Typ.) +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 .
Small Package Low forward voltage :VF(3) = 0.92 V(Typ.) Fast Reverse Recovery Time :trr = 1.6 ns(Typ.) Small Total Capacitance :CT = 2.2pF(Typ.) +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute M axim um Ratings Ta = 25 Param eter Peak Reverse Voltage DC Reverse Voltage Peak Reverse Voltage Average Rectified Current Surge Current (10 m s) DC Forward Current Junction Tem perature Storage Tem perature Range Sym bol VRM VR IFM IO IFSM P Tj T stg R a tin g 85 80 300 100 2 150 125 -55 to + 125 U n it V V mA mA A mW 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.
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No. | Part # | Manufacture | Description | Datasheet |
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Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode |
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WON-TOP |
SURFACE MOUNT FAST SWITCHING DIODE |
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JCET |
SWITCHING DIODE |
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WILLAS |
Ultra High Speed Switching Diode |
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MCC |
High Speed Switching Diodes |
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RECTRON |
SWITCHING DIODE |
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WEITRON |
Surface Mount Switching Diodes |
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WEJ |
DIODE |
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SEMTECH |
SILICON EPITAXIAL PLANAR DIODE |
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Kexin |
ULTRA HIGH SPEED SWITCHING DIODE |
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Galaxy Semi-Conductor |
Surface mount switching diode |
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TRANSYS |
Plastic-Encapsulated Diodes |
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Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode |
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EIC |
SILICON EPITAXIAL PLANAR DIODE |
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JCET |
SWITCHING DIODE |
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