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MRF21120R6 |
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| Part Number | MRF21120R6 |
| Manufacturer | Freescale Semiconductor |
| Description | Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110 to 2170 ... |
| Features |
• Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • RoHS Compliant • In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. Document Number: MRF21120 Rev. 11, 5/2006 M... |
| Document |
 MRF21120R6 Data Sheet
PDF 394.67KB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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Motorola |
RF POWER FIELD EFFECT TRANSISTOR |
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Motorola |
RF POWER FIELD EFFECT TRANSISTORS |
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Freescale Semiconductor |
RF Power Field Effect Transistors |
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Motorola |
RF POWER FIELD EFFECT TRANSISTORS |
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Motorola |
RF POWER FIELD EFFECT TRANSISTORS |
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Freescale Semiconductor |
RF Power Field Effect Transistors |
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Motorola |
RF Power Field Effect Transistor |
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Freescale Semiconductor |
RF Power Field Effect Transistors |
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Motorola |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
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Freescale Semiconductor |
RF Power Field Effect Transistors |
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