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K7R320884M |
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| Part Number | K7R320884M |
| Manufacturer | Samsung semiconductor |
| Description | on page 2 and add HSTL I/O comment 0.3 1. Update current characteristics in DC electrical characteristics 2. Change AC timing characteristics 3. Update JTAG instruction coding and diagrams 0.4 1. Ad... |
| Features |
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| Document |
 K7R320884M Data Sheet
PDF 202.00KB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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Samsung semiconductor |
(K7R32xx82C) QDR II b2 SRAM |
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Samsung semiconductor |
1M x 36 & 2M x 18 & 4M x 9 QDR II b2 SRAM |
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Samsung semiconductor |
(K7R32xx82C) QDR II b2 SRAM |
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Samsung semiconductor |
1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM |
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Samsung semiconductor |
1M x 36 & 2M x 18 QDR II b4 SRAM |
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Samsung semiconductor |
(K7R32xx82C) QDR II b2 SRAM |
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Samsung semiconductor |
1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM |
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Samsung semiconductor |
1M x 36 & 2M x 18 QDR II b4 SRAM |
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Samsung semiconductor |
512Kx36 & 1Mx18 QDR II b4 SRAM |
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Samsung semiconductor |
512Kx36 & 1Mx18 QDR II b4 SRAM |
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