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KTC3875GR-G |
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| Part Number | KTC3875GR-G |
| Manufacturer | Comchip |
| Description | General Purpose Transistor KTC3875GR-G (NPN) RoHS Device Features - High hFE - Low noise Circuit Diagram 1 Base Collector 3 2 Emitter 0.055(1.40) 0.047(1.20) SOT-23 0.118(3.00) 0.110(2.80) 3 1 :... |
| Features |
- High hFE - Low noise
Circuit Diagram
1 Base
Collector 3
2 Emitter
0.055(1.40) 0.047(1.20)
SOT-23
0.118(3.00) 0.110(2.80)
3
1 : BASE 2 : EMITTER 3 : COLLECTOR
12
0.079(2.00) 0.071(1.80)
Maximum Ratings (at TA=25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base voltage VCBO 60 V
Collector-Emitter voltage
VCEO
50
V
Emitter-Base voltage
VEBO 5 V
Collector current
IC 150 mA
Collector power dissipation
PC
150 mW
Thermal resistance from junction to ambient
RθJA
833 °C/W
Junction temperature range
TJ
150 °C
Storage temperature range
Tstg
-55~+150
... |
| Document |
 KTC3875GR-G Data Sheet
PDF 123.46KB |
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