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Value Unit Conditions VCEO VCBO VEBO IC Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current 45 V 50 V 5.0 V 500 mA PD RθJA Total Device Power Dissipation Thermal Resistance, Junction to Ambient (Note 1) 225 mW TA=25 ˚C 1.8 mW/°C Derate above 25 ˚C 55.
• NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications
• RoHS compliance
Mechanical Data
Case: Terminals:
Weight:
SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram
Marking Information
BC817-16 BC17-25
BC817-40
Marking Code
6A
6B
6C
SOT-23
Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Symbol
Description
Value
Unit
Conditions
VCEO VCBO VEBO
IC
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
45 V 50 V 5.0 V 500 mA
PD RθJA
Total Device Power Dissipation Thermal Resistance, Ju.
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