2SC2717 NPN Transistor

2SC2717 NPN Transistor

1. BASE 2. EMITTER 3. COLLECTOR 2SC2717(NPN) TO-92 Bipolar Transistors TO-92 Features High Gain: Gpe =33 dB ( Typ. ) ( f =45MHZ) Good Linearity of hFE. MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Vol.

Features

High Gain: Gpe =33 dB ( Typ. ) ( f =45MHZ) Good Linearity of hFE. MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 4V IC Collector Current -Continuous 50 mA PC Collector Power Dissipation 300 mW Tj Junction Temperature 125 ℃ Tstg Storage Temperature -55-125 ℃ Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC=100μA,IE.