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Plastic-Encapsulate Transistors FEATURES Low Noise: NF=1 dB (Typ),10dB(MAX) Complementary to 2SA1162 2SC2712 (NPN) MAXIMUM RATINGS (TA=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature .
Low Noise: NF=1 dB (Typ),10dB(MAX) Complementary to 2SA1162 2SC2712 (NPN) MAXIMUM RATINGS (TA=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature unless otherwise noted) Symbol Value VCBO 60 VCEO 50 VEBO 5 IC 150 PC 200 TJ 150 Tstg -55 to +150 Unit V V V mA mW 1. BASE 2. EMITTER 3. COLLECTO SOT-23 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage .
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Toshiba Semiconductor |
Silicon NPN TRANSISTOR |
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BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
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Toshiba Semiconductor |
Silicon NPN Transistor |
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AiT Semiconductor |
NPN TRANSISTOR |
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GME |
Silicon NPN Transistor |
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INCHANGE |
NPN Transistor |
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UTC |
AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR |
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Weitron Technology |
Silicon NPN Transistors |
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Galaxy Semi-Conductor |
Silicon NPN Transistor |
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Kexin |
Silicon NPN Transistor |
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SeCoS |
NPN Transistor |
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Rectron |
BIPOLAR TRANSISTORS |
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Jin Yu Semiconductor |
TRANSISTOR |
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WEJ |
NPN Transistor |
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BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
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