AO3400 Datasheet

AO3400 N-Channel MOSFET

Plastic-Encapsulate Mosfets FEATURES The AO3400 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited .

Features

The AO3400 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits where high side switching. D G S AO3400 N-Channel MOSFET 1.Gate 2.Source 3.Drain SOT-23 Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage .