IRFS830 |
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| Part Number | IRFS830 |
| Manufacturer | LZG |
| Description | IRFS830(CS830F) N-Channel MOSFET/N MOS : DC/DC 。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,,。 Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS 5... |
| Features |
Low gate charge, low crss, fast switching.
/Absolute maximum ratings(Ta=25℃)
Symbol
Rating
Unit
VDSS 500 V
ID(Tc=25℃)
5.0 A
ID(Tc=100℃)
3.0 A
IDM 20 A
VGSS
±30
V
IAR 4.5 A
EAS 292 mJ
EAR
8.75
mJ
PD(Tc=25℃)
38 W
TJ,TSTG
-55 to 150 ℃
/Electrical Characteristics(Ta=25℃)
Symbol
Test Conditions
BVDSS
VGS=0V
ID=250μA
IDSS
VDS=500V VDS=400V
VGS=0V TC=125℃
IGSS VGS=±30V VDS=0V
VGS(th)
VDS=VGS
ID=250μA
RDS(on)
VGS=10V
ID=2.5A
gFS
VDS=40V
ID=2.5A
VSD
VGS=0V
IS=5.0A
Ciss
Coss VDS=25V VGS=0V f=1.0MHz
Crss
td(on)
tr td(off)
VDD=250V ID=4.5A RG=25... |
| Datasheet |
 IRFS830 Data Sheet
PDF 294.02KB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
|---|---|---|---|---|
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BLUE ROCKET ELECTRONICS |
N-CHANNEL MOSFET |
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TAITRON |
N-Channel Power MOSFET |
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Inchange Semiconductor |
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Samsung |
Power MOSFET |
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Fairchild |
500V N-Channel MOSFET |
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Inchange Semiconductor |
N-Channel MOSFET Transistor |
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Samsung |
Power MOSFET |
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Fairchild |
500V N-Channel MOSFET |
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LZG |
N-Channel MOSFET |
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BLUE ROCKET ELECTRONICS |
N-CHANNEL MOSFET |
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Samsung |
N-Channel Power MOSFET |
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Inchange Semiconductor |
N-Channel MOSFET Transistor |
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