IRF630 |
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Part Number | IRF630 |
Manufacturer | Inchange Semiconductor |
Description | MOSFET IRF630 N-channel mosfet transistor INCHANGE Features With TO-220 package Low on-state and thermal resistance Fast switching V DSS=200V; RDS(ON)0.4 ;I D=9A 1.gate 2.drain 3.source Absolute... |
Features |
With TO-220 package Low on-state and thermal resistance Fast switching V DSS=200V; RDS(ON)0.4 ;I D=9A 1.gate 2.drain 3.source
Absolute Maximum Ratings Tc=25
SYMBOL VDSS VGS ID Ptot Tj Tstg
PARAMETER Drain-source voltage (VGS=0) Gate-source voltage Drain Current-continuous@ TC=25 Total Dissipation@TC=25 Max. Operating Junction temperature Storage temperature
RATING 200 20 9 74 150
-65~150
UNIT V V A W
123
TO-220
Electrical Characteristics Tc=25
SYMBOL
PARAMETER
V(BR)DSS Drain-source breakdown voltage
CONDITIONS
VGS=0; ID=0.25mA
VGS(TH) Gate threshold voltage
VDS= VGS; ID=1mA
RD... |
Datasheet |
IRF630 Data Sheet
PDF 31.89KB |
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