2N6308 |
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| Part Number | 2N6308 |
| Manufacturer | Multicomp |
| Description | High voltage, TO-3, NPN, Silicon, Power Transistor. Designed for high voltage inverters, switching regulators and line – operated amplifier applications. Especially well suited for switching power su... |
| Features |
• Low Collector Emitter Saturation Voltage : VCE(sat) 1.5V(Max.) @ IC - 3A • Current Gain-bandwidth Product : 5MHz (Min.) @ IC - 0.3A Absolute Maximum Ratings: Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Continuous Collector Current, IC Base Current IB Total Device Dissipation (TC = +25°C), PD Derate above 25°C Operating Junction Temperature Range, TJ Storage Temperature Range, Tstg : 700V : 350V : 8V : 8A : 4A : 125W : 0.714mW/°C : -65°C to +200°C : -65°C to +200°C Electrical Characteristics: (TA = +25°C unless otherwise specified) ... |
| Document |
 2N6308 Data Sheet
PDF 339.83KB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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VPT |
NPN Darlington Power Silicon Transistor |
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Central Semiconductor |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
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Microsemi |
PNP DARLINGTON POWER SILICON TRANSISTOR |
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Savantic |
Silicon NPN Power Transistors |
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Seme LAB |
DARLINGTON SILICON POWER TRANSISTORS |
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VPT |
NPN Darlington Power Silicon Transistor |
|
|
|
|
Central Semiconductor |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
|
|
|
|
Microsemi |
PNP DARLINGTON POWER SILICON TRANSISTOR |
|
|
|
|
Savantic |
Silicon NPN Power Transistors |
|
|
|
|
Seme LAB |
DARLINGTON SILICON POWER TRANSISTORS |
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