SSF3002EG1 MOSFET

SSF3002EG1 MOSFET

It utilizes the latest trench processing techniquesto achieve the high cell density and reduces the on-resistance with high repetitiveavalanche rating. These features combine to makethis design an extremely efficient and reliable devicefor use in power switching applicationand a wide varietyof othe.

Features

andBenefits:
 Advanced trench MOSFET process technology
 Special designed for PWM, load switching and general purpose applications
 Ultra low on-resistance with low gate charge
 Fast switching and reverse body recovery
 150℃ operating temperature
 ESD Protected, HBM 1KV SSF3002EG1 Marking and pin Assignment Schematic diagram Description: It utilizes the latest trench processing techniquesto achieve the high cell density and reduces the on-resistance with high repetitiveavalanche rating. These features combine to makethis design an extremely efficient and reliable devicefor use in pow.