SSFN2569 MOSFET

SSFN2569 MOSFET

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other.

Features

 Advanced MOSFET process technology
 Special designed for PWM, load switching and general purpose applications
 Ultra low on-resistance with low gate charge
 Fast switching and reverse body recovery
 150℃ operating temperature DFN 3x2-8L Bottom View SSFN2569 D1 G1 G2 D2 S1 S2 Schematic diagram Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a w.