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2N2647 SILICON UNIJUNCTION TRANSISTOR

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2N2647 SILICON UNIJUNCTION TRANSISTOR

2N2646, 2N2647 High-reliability discrete products and engineering services since 1977 SILICON UNIJUNCTION TRANSISTOR FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and.

Features


 Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
 Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Symbol Value Unit Power dissipation(1) PD 300 mW RMS emitter current IE(EMS) 50 mA Peak pulse emitter current (2) IE 2 Amps Emitter reverse voltage VB2E 30 Volts Interbase voltage VB2B1 35 Volts Operating junction temperature range TJ -65 to 125 °C Storage temperature range Tstg -65 to 150 °C Note 1: Derate 3mW/°C increase in ambient temperature.

2N2647 2N2647 2N2647
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