VS-1N3766 Power Silicon Rectifier Diodes

VS-1N3766 Power Silicon Rectifier Diodes

FEATURES • Low leakage current series • Good surge current capability up to 1000 A • Can be supplied to meet stringent military, aerospace, and other high reliability requirements • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 MAJOR RATINGS AND CHARACTE.

Features

• Low leakage current series
• Good surge current capability up to 1000 A
• Can be supplied to meet stringent military, aerospace, and other high reliability requirements
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 MAJOR RATINGS AND CHARACTERISTICS PARAMETER IF(AV) IFSM I2t I2t VRRM TJ TEST CONDITIONS TC 50 Hz 60 Hz 50 Hz 60 Hz Range 1N1183 35 (1) 140 (1) 480 500 (1) 1140 1040 16 100 50 to 600 (1) -65 to 200 Note (1) JEDEC® registered values 1N3765 35 (1) 140 (1) 380 400 (1) 730 670 10 300 700 to 1000 (1) -65 to 200 1N1183A 40 (1) 150 (1.