1N3213 |
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| Part Number | 1N3213 |
| Manufacturer | GeneSiC |
| Description | Silicon Standard Recovery Diode Features • High Surge Capability • Types from 400 V to 600 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anod... |
| Features |
• High Surge Capability • Types from 400 V to 600 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N3212 thru 1N3214R VRRM = 400 V - 600 V IF = 15 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N3212 (R) 1N3213 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS V... |
| Document |
 1N3213 Data Sheet
PDF 682.60KB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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Vishay |
Silicon Rectifier Diodes |
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International Rectifier |
15 Amp Stud-mounted Silicon Rectifier Diodes |
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DACO SEMICONDUCTOR |
STANDARD RECOVERY DIODE |
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America Semiconductor |
Silicon Standard Recovery Diode |
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GeneSiC |
Silicon Standard Recovery Diode |
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Digitron Semiconductors |
STANDARD RECOVERY RECTIFIERS |
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DACO SEMICONDUCTOR |
STANDARD RECOVERY DIODE |
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International Rectifier |
15 Amp Stud-mounted Silicon Rectifier Diodes |
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America Semiconductor |
Silicon Standard Recovery Diode |
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GeneSiC |
Silicon Standard Recovery Diode |
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