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WFU2N65L |
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| Part Number | WFU2N65L |
| Manufacturer | Winsemi |
| Description | Silicon N-Channel MOSFET Features � 2A,650V,RDS(on)(Max 5.0Ω)@VGS=10V � Ultra-low Gate Charge(Typical 8nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃... |
| Features |
� 2A,650V,RDS(on)(Max 5.0Ω)@VGS=10V � Ultra-low Gate Charge(Typical 8nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply .
Absolute Maximum Ratings
Symbol
Parameter
VDSS ID
Drain Source Voltage Continuous Drain Current(@Tc=25℃) ... |
| Document |
 WFU2N65L Data Sheet
PDF 278.12KB |
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