MPSA29 Datasheet

MPSA29 NPN Transistor

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors MPSA29 TRANSISTOR (NPN) FEATURES z Darlington Transistor TO – 92 1.EMITTER 2.BASE 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCES VEBO IC PC RθJA Tj Tstg Parameter Collector-Bas.

Features

z Darlington Transistor TO
  – 92 1.EMITTER 2.BASE 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCES VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature StorageTemperature Value 100 100 12 0.5 625 200 150 -55~+150 Unit V V V A mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage V(B.