BSC010N04LS Power MOSFET

BSC010N04LS Power MOSFET

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Features

• Optimized for sychronous rectification
• 175°C rated
• Very low on‑resistance RDS(on)
• 100% avalanche tested
• Superior thermal resistance
• N‑channel, logic level
• Pb‑free lead plating; RoHS compliant
• Halogen‑free according to IEC61249‑2‑21
• Higher solder joint reliability due to enlarged source interconnection Product validation Fully qualified according to JEDEC for Industrial Applications Table 1 Parameter VDS RDS(on),max ID Qoss Qg (0V..10V) Key Performance Parameters Value Unit 40 V 1.0 mΩ 292 A 84 nC 95 nC PG‑TDSON‑8 8 7 6 5 5 6 7 8 Pin 1 2 3 4 4 3 2 1 Drain P.