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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BCV27 TRANSISTOR (NPN) SOT–23 FEATURES High Collector Current High Current Gain MARKING:FF MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage 40 VCE.
High Collector Current
High Current Gain
MARKING:FF
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
40
VCEO Collector-Emitter Voltage
30
VEBO Emitter-Base Voltage
10
IC Collector Current
500
PC Collector Power Dissipation
300
RΘJA Thermal Resistance From Junction To Ambient
416
Tj Junction Temperature Tstg Storage Temperature
150 -55～+150
Unit V V V mA
mW ℃/W
℃ ℃
1. BASE 2. EMITTER 3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown v.
| Distributor | Stock | Price | Buy |
|---|
| No. | Part # | Manufacture | Description | Datasheet |
|---|---|---|---|---|
| 1 | BCV26 |
NXP |
PNP Darlington transistors |
|
| 2 | BCV26 |
Fairchild Semiconductor |
PNP Darlington Transistor |
|
| 3 | BCV26 |
Infineon Technologies AG |
PNP Silicon Darlington Transistors |
|
| 4 | BCV26 |
SEMTECH |
PNP Darlington Transistors |
|
| 5 | BCV27 |
NXP |
NPN Darlington transistors |
|
| 6 | BCV27 |
Fairchild Semiconductor |
NPN Darlington Transistor |
|
| 7 | BCV27 |
Infineon Technologies AG |
NPN Silicon Darlington Transistors |
|
| 8 | BCV27 |
SEMTECH |
NPN Darlington Transistors |
|
| 9 | BCV27 |
SeCoS |
NPN Darlington Plastic Encapsulated Transistor |
|
| 10 | BCV28 |
NXP |
PNP Darlington transistors |
|
| 11 | BCV28 |
Infineon Technologies AG |
PNP Silicon Darlington Transistors |
|
| 12 | BCV29 |
NXP |
NPN Darlington transistors |
|
| 13 | BCV29 |
Infineon Technologies AG |
NPN Silicon Darlington Transistors |
|
| 14 | BCV46 |
NXP |
PNP Darlington transistors |
|
| 15 | BCV46 |
Infineon Technologies AG |
PNP Silicon Darlington Transistors |
|
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