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AUIRLR120N |
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| Part Number | AUIRLR120N |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit c... |
| Features |
Advanced Planar Technology Logic Level Gate Drive Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provide... |
| Document |
 AUIRLR120N Data Sheet
PDF 428.55KB |
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| No. | Part # | Manufacture | Description | Datasheet |
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International Rectifier |
Power MOSFET |
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Infineon |
Power MOSFET |
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International Rectifier |
HEXFET Power MOSFET |
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Infineon |
Power MOSFET |
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International Rectifier |
Power MOSFET |
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Infineon |
Power MOSFET |
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International Rectifier |
Power MOSFET |
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International Rectifier |
Power MOSFET |
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Infineon |
Power MOSFET |
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International Rectifier |
HEXFET Power MOSFET |
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