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AUIRF7478Q |
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| Part Number | AUIRF7478Q |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit c... |
| Features |
Advanced Planar Technology Low On-Resistance Logic Level Gate Drive Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * S1 S2 S3 G4 AA 8D 7D 6D 5D Top View VDSS RDS(on) typ. max. ID 60V 20m 26m 7.0A Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized devi... |
| Document |
 AUIRF7478Q Data Sheet
PDF 374.74KB |
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| No. | Part # | Manufacture | Description | Datasheet |
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International Rectifier |
Power MOSFET |
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Infineon |
Power MOSFET |
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International Rectifier |
Power MOSFET |
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Infineon |
Power MOSFET |
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International Rectifier |
Power MOSFET |
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Infineon |
Dual N-Channel MOSFET |
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International Rectifier |
Power MOSFET |
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Infineon |
Power MOSFET |
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International Rectifier |
Power MOSFET |
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Infineon |
Dual N-Channel MOSFET |
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