CS2N70FA9 Silicon N-Channel Power MOSFET

CS2N70FA9 Silicon N-Channel Power MOSFET

VDSS 700 V CS2N70F A9, the silicon N-channel Enhanced ID 2A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 27 W which reduce the conduction loss, improve switching RDS(ON)Typ 4.7 Ω performance and enhance the avalanche energy. The transistor can be used in va.

Features

l Fast Switching l Low ON Resistance(Rdson≤6.5Ω) l Low Gate Charge (Typical Data:8.5nC) l Low Reverse transfer capacitances(Typical:3.8pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified） Symbol Parameter VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = .