CS10N65A8R Silicon N-Channel Power MOSFET

CS10N65A8R Silicon N-Channel Power MOSFET

CS10N65 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and hig.

Features

l Fast Switching VDSS ID PD(TC=25℃) RDS(ON)Typ 650 V 10 A 130 W 0.86 Ω l Low ON Resistance(Rdson≤1.0Ω) l Low Gate Charge (Typical Data:32nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Cur.