CS540 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS ID PD(TC=25℃) RDS(ON)Typ 100 33 150 30 switching performance and enhance the avalanche energy. The transistor can be used in various power switchi.
l Fast Switching l Low ON Resistance(Rdson≤44 mΩ) l Low Gate Charge (Typical Data:37nC) l Low Reverse transfer capacitances(Typical:10pF) l 100% Single Pulse avalanche energy Test Applications: Automotive、DC Motor Control and Class D Amplifier. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter Rating VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJ,Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C.
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
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1 | CS540A3 |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
2 | CS540A4 |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
3 | CS540AR |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
4 | CS540B8 |
HUAJING MICROELECTRONICS |
N-Channel MOSFET | |
5 | CS54-06A |
Fuji Electric |
Fast Recovery High Voltage Silicon Rectifiers |