CS25N06B4 |
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| Part Number | CS25N06B4 |
| Manufacturer | Huajing Microelectronics |
| Description | CS25N06 B4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energ... |
| Features |
l Fast Switching l Low ON Resistance(Rdson≤36 mΩ) l Low Gate Charge (Typical Data:13nC) l Low Reverse transfer capacitances(Typical:87pF) l 100% Single Pulse avalanche energy Test
VDSS ID PD(TC=25℃) RDS(ON)Typ
60 V 25 A 50 W 28 mΩ
Applications：
Automotive、DC Motor Control and Class D Amplifier.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID IDMa1 VGS dv/dt a2
PD
TJ，Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current G... |
| Datasheet |
 CS25N06B4 Data Sheet
PDF 697.00KB |
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