Dual N-Channel OptiMOS™ MOSFET Features Product Summary • Dual N-channel OptiMOS™ MOSFET • Integrated monolithic Schottky-like diode • Optimized for high performance Buck converter • Logic level (4.5V rated) • 100% avalanche tested VDS RDS(on),max ID VGS=10 V VGS=4.5 V • Qualified according to .
Product Summary
• Dual N-channel OptiMOS™ MOSFET
• Integrated monolithic Schottky-like diode
• Optimized for high performance Buck converter
• Logic level (4.5V rated)
• 100% avalanche tested
VDS RDS(on),max
ID
VGS=10 V VGS=4.5 V
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
VPhase
• Halogen-free according to IEC61249-2-22
BSC0924NDI
Q1 Q2 30 30 V 5 3.7 mW 7 5.2 40 40 A
Type BSC0924NDI
Package PG-TISON-8
Marking 0924NDI
Maximum ratings, at T j=25 °C, unless otherwise specified 2)
Parameter Continuous drain current
Pulsed drain curr.
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
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1 | BSC0921NDI |
Infineon |
Dual N-Channel OptiMOS MOSFET | |
2 | BSC0923NDI |
Infineon |
Dual N-Channel OptiMOS MOSFET | |
3 | BSC0925ND |
Infineon |
Power-MOSFET | |
4 | BSC0901NS |
Infineon Technologies |
N-Channel Power MOSFET | |
5 | BSC0901NSI |
Infineon Technologies |
n-Channel Power MOSFET | |
6 | BSC0902NS |
Infineon Technologies |
N-Channel Power MOSFET | |
7 | BSC0902NSI |
Infineon |
MOSFET | |
8 | BSC0904NSI |
Infineon Technologies |
N-Channel Power MOSFET | |
9 | BSC0906NS |
Infineon |
Power MOSFET | |
10 | BSC0908NS |
Infineon Technologies |
N-Channel Power MOSFET | |
11 | BSC0909NS |
Infineon Technologies |
N-Channel Power MOSFET | |
12 | BSC090N03LSG |
Infineon Technologies |
Power-MOSFET | |
13 | BSC090N03MSG |
Infineon Technologies |
Power-MOSFET | |
14 | BSC0910NDI |
Infineon |
Dual N-Channel OptiMOS MOSFET | |
15 | BSC0911ND |
Infineon |
Dual N-Channel OptiMOS MOSFET |